SST39VF010-70-4C-WHE

Product Summary

The SST39VF010-70-4C-WHE is a 128K x8 Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF010-70-4C-WHE writes (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010-70-4C-WHE writes with a 2.7-3.6V power supply. The SST39VF010-70-4C-WHE conforms to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39VF010-70-4C-WHE provides a maximum Byte-Program time of 20 μsec. These SST39VF010-70-4C-WHE uses Toggle Bit or Data# Polling to indicate the completion of Program operation. The SST39VF010-70-4C-WHE is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, it significantly improves performance and reliability, while lowering power consumption.

Parametrics

SST39VF010-70-4C-WHE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (8)Output Short Circuit Current: 50 mA.

Features

SST39VF010-70-4C-WHE features: (1)Organized as 128K x8; (2)Single Voltage Read and Write Operations: 2.7-3.6V; (3)Superior Reliability: Endurance: 100,000 Cycles (typical); Greater than 100 years Data Retention; (4)Low Power Consumption (typical values at 14 MHz): Active Current: 5 mA (typical); Standby Current: 1 μA (typical); (5)Sector-Erase Capability: Uniform 4 KByte sectors; (6)Fast Read Access Time: 70 ns; (7)Latched Address and Data; (8)Fast Erase and Byte-Program: Sector-Erase Time: 18 ms (typical); Chip-Erase Time: 70 ms (typical); Byte-Program Time: 14 μs (typical); Chip Rewrite Time: 2 seconds (typical); (9)Automatic Write Timing: Internal VPP Generation; (10)End-of-Write Detection: Toggle Bit; Data# Polling; (11)CMOS I/O Compatibility: JEDEC Standard; (12)Flash EEPROM Pinouts and command sets.

Diagrams