Product Summary

The PESD5V0S1BA is a low capacitance bidirectional ESD protection diode in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.

Parametrics

PESD5V0S1BA absolute maximum ratings: (1)peak pulse power: 130 W min at 8/20 μs; (2)peak pulse current : 12 A min at 8/20 μs; (3)junction temperature: 150 ℃; (4)ambient temperature: -65 +150 ℃; (5)storage temperature: -65 +150 ℃.

Features

PESD5V0S1BA features: (1)Bidirectional ESD protection of one line; (2)ESD protection > 30 kV; (3)Max. peak pulse power: PPP = 130 W; (4)IEC 61000-4-2, level 4 (ESD); (5)Low clamping voltage: V(CL)R = 14 V; (6)IEC 61000-4-5 (surge); IPP = 12 A; (7)Ultra low leakage current: IRM = 5 nA; (8)Ultra small SMD plastic packages.

Diagrams

PESD5V0S1BA circuit

Image Part No Mfg Description Data Sheet Download Pricing
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PESD5V0S1BA
PESD5V0S1BA

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Data Sheet

Negotiable 
PESD5V0S1BA,115
PESD5V0S1BA,115

NXP Semiconductors

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Data Sheet

0-1: $0.06
1-25: $0.06
25-100: $0.06
100-250: $0.05