Product Summary
The PESD5V0S1BA is a low capacitance bidirectional ESD protection diode in ultra small SMD plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Parametrics
PESD5V0S1BA absolute maximum ratings: (1)peak pulse power: 130 W min at 8/20 μs; (2)peak pulse current : 12 A min at 8/20 μs; (3)junction temperature: 150 ℃; (4)ambient temperature: -65 +150 ℃; (5)storage temperature: -65 +150 ℃.
Features
PESD5V0S1BA features: (1)Bidirectional ESD protection of one line; (2)ESD protection > 30 kV; (3)Max. peak pulse power: PPP = 130 W; (4)IEC 61000-4-2, level 4 (ESD); (5)Low clamping voltage: V(CL)R = 14 V; (6)IEC 61000-4-5 (surge); IPP = 12 A; (7)Ultra low leakage current: IRM = 5 nA; (8)Ultra small SMD plastic packages.
Diagrams
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PESD5V0S1BA |
Other |
Data Sheet |
Negotiable |
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PESD5V0S1BA,115 |
NXP Semiconductors |
TVS Diodes - Transient Voltage Suppressors 5V BIDIRECTION ESD |
Data Sheet |
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